HUF75343P3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
HUF75343P3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
UltraFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
270W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
205nC @ 20V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
HUF75343P3 Product Details
HUF75343P3 Description
Using the ground-breaking UltraFET? technology, HUF75343P3 is a 75V N-Channel MOSFET Transistor in TO-220AB. Outstanding performance is the result of this cutting-edge process technology's achievement of the lowest on-resistance per silicon area. The HUF75343P3 diode has a very short reverse recovery time and very little stored charge, and it can tolerate tremendous energy in the avalanche mode. Applications, where power efficiency is crucial, include switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered goods. These are just a few of the areas where the HUF75343P3 was created.
HUF75343P3 Features
75A, 55V
Simulation Models
- Temperature Compensating PSPICE? and SABER? Models
- Thermal Impedance PSPICE? and SABER Models are Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”