IXFH80N085

new-10%

Manufacturer part number:IXFH80N085

Manufacturer:IXYS

Description:MOSFET N-CH 85V 80A TO-247

Case Package:SOT-23

Datasheet:IXFH80N085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	9MOhm
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	75ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	85A
Drain to Source Breakdown Voltage	85V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free