IRFR540ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFR540ZPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
91W Tc
Element Configuration
Single
Power Dissipation
91W
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
28.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Rise Time
42ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
34 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
35A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Recovery Time
48 ns
Nominal Vgs
4 V
Height
2.2606mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRFR540ZPBF Product Details
IRFR540ZPBF Description
The IRFR540ZPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.