IXFJ32N50

new-10%

Manufacturer part number:IXFJ32N50

Manufacturer:IXYS

Description:MOSFET N-CH TO-220

Case Package:SOT-23

Datasheet:IXFJ32N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	NO
Transistor Element Material	SILICON
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-268AA
Drain Current-Max (Abs) (ID)	32A
Drain-source On Resistance-Max	0.15Ohm
Pulsed Drain Current-Max (IDM)	128A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	1500 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	360W
RoHS Status	RoHS Compliant