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TSM1NB60SCT A3

TSM1NB60SCT A3

TSM1NB60SCT A3

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 10Ohm @ 250mA, 10V ±30V 138pF @ 25V 6.1nC @ 10V 600V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SOT-23

TSM1NB60SCT A3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
TSM1NB60SCT A3 Product Details

TSM1NB60SCT A3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 138pF @ 25V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TSM1NB60SCT A3 Features


a 600V drain to source voltage (Vdss)


TSM1NB60SCT A3 Applications


There are a lot of Taiwan Semiconductor Corporation
TSM1NB60SCT A3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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