IXFK34N80

new-10%

Manufacturer part number:IXFK34N80

Manufacturer:IXYS

Description:MOSFET N-CH 800V 34A TO-264AA

Case Package:SOT-23

Datasheet:IXFK34N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Number of Terminations	3
Resistance	240mOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	34A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	560W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	560W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Recovery Time	250 ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free