STN2NF10

new-10%

STN2NF10

Manufacturer part number:STN2NF10

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:STN2NF10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	260mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STN2N
Pin Count	4
Number of Elements	1
Power Dissipation-Max	3.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	300 mJ
Height	1.8mm
Length	6.5mm
Width	3.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free