IXFL34N100

new-10%

Manufacturer part number:IXFL34N100

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 30A ISOPLUS264

Case Package:SOT-23

Datasheet:IXFL34N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	280mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	550W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	550W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free