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IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

Infineon Technologies

MOSFET N-CHANNEL_30/40V

SOT-23

IPB80N04S2H4ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-263-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
Halogen Free Halogen Free
Rise Time 63ns
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 22 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.4nF
Avalanche Energy Rating (Eas) 660 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 3.7 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.036410 $14.03641
10 $13.241896 $132.41896
100 $12.492355 $1249.2355
500 $11.785240 $5892.62
1000 $11.118151 $11118.151

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