IXFL82N60P

new-10%

Manufacturer part number:IXFL82N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 55A ISOPLUS 264

Case Package:SOT-23

Datasheet:IXFL82N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 41A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	55A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.078Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	ROHS3 Compliant