APTM20DAM08TG

new-10%

Manufacturer part number:APTM20DAM08TG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 200V 208A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTM20DAM08TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	781W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	781W
Case Connection	ISOLATED
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 104A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	208A Tc
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Rise Time	64ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	116 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	208A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	832A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant