IXFN320N17T2

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IXFN320N17T2

Manufacturer part number:IXFN320N17T2

Manufacturer:IXYS

Description:MOSFET N-CH 170V 260A SOT227

Case Package:SOT-23

Datasheet:IXFN320N17T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	GigaMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	NICKEL
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Number of Outputs	1
Qualification Status	Not Qualified
Output Voltage	170V
Number of Elements	1
Power Dissipation-Max	1070W Tc
Element Configuration	Single
Nominal Supply Current	100A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.07kW
Output Current	260A
Case Connection	ISOLATED
Turn On Delay Time	46 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	45000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260A Tc
Gate Charge (Qg) (Max) @ Vgs	640nC @ 10V
Rise Time	170ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	230 ns
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	260A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	170V
Pulsed Drain Current-Max (IDM)	800A
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free