IXTA28P065T

new-10%

Manufacturer part number:IXTA28P065T

Manufacturer:IXYS

Description:MOSFET P-CH 65V 28A TO-263

Case Package:SOT-23

Datasheet:IXTA28P065T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	TrenchP™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2030pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Drain to Source Voltage (Vdss)	65V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	-65V
Pulsed Drain Current-Max (IDM)	90A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant