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IXFN50N120SIC

IXFN50N120SIC

IXFN50N120SIC

IXYS

MOSFET N-CH

SOT-23

IXFN50N120SIC Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +20V, -5V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $599.823773 $599.823773
10 $565.871484 $5658.71484
100 $533.841023 $53384.1023
500 $503.623606 $251811.803
1000 $475.116610 $475116.61

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