NDD03N60Z-1G

new-10%

Manufacturer part number:NDD03N60Z-1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET IPAK 600V 2.6A 3.6R

Case Package:SOT-23

Datasheet:NDD03N60Z-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	3.6Ohm
Technology	MOSFET (Metal Oxide)
Pin Count	4
Number of Elements	1
Power Dissipation-Max	61W Tc
Element Configuration	Single
Power Dissipation	61W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	312pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.6A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	7.62mm
Length	6.73mm
Width	2.38mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free