IXFN520N075T2 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 41000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 5V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN520N075T2 Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 480A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 80 ns

IXFN520N075T2 Applications

There are a lot of IXYS
IXFN520N075T2 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies