IXFN66N50Q2

new-10%

Manufacturer part number:IXFN66N50Q2

Manufacturer:IXYS

Description:MOSFET N-CH 500V 66A SOT-227B

Case Package:SOT-23

Datasheet:IXFN66N50Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HiPerFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-XUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	735W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	735W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	66A Tc
Gate Charge (Qg) (Max) @ Vgs	199nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	66A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	264A
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	RoHS Compliant