SI4196DY-T1-E3

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Manufacturer part number:SI4196DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 8A 8SOIC

Case Package:SOT-23

Datasheet:SI4196DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2W Ta 4.6W Tc
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	27mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 8V
Rise Time	13ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	8V
Input Capacitance	830pF
Rds On Max	27 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant