IXFN80N50P Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 12700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 66A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFN80N50P Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.

IXFN80N50P Applications

There are a lot of IXYS
IXFN80N50P applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples