IXFP110N15T2

new-10%

Manufacturer part number:IXFP110N15T2

Manufacturer:IXYS

Description:MOSFET Trench T2 HiperFET Power MOSFET

Case Package:SOT-23

Datasheet:IXFP110N15T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	GigaMOS™, HiPerFET™, TrenchT2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	480W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	480W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 55A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	110A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	4.5V
Drain to Source Breakdown Voltage	150V
Avalanche Energy Rating (Eas)	800 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free