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IXFP36N20X3

IXFP36N20X3

IXFP36N20X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 45m Ω @ 18A, 10V ±20V 1425pF @ 25V 21nC @ 10V 200V TO-220-3

SOT-23

IXFP36N20X3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 36A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 300 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.017000 $4.017
10 $3.789623 $37.89623
100 $3.575116 $357.5116
500 $3.372751 $1686.3755
1000 $3.181840 $3181.84
IXFP36N20X3 Product Details

IXFP36N20X3 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 1425pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 36A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFP36N20X3 Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 50A.
a 200V drain to source voltage (Vdss)


IXFP36N20X3 Applications


There are a lot of IXYS
IXFP36N20X3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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