IXFR12N100

new-10%

Manufacturer part number:IXFR12N100

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 10A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR12N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Transistor Element Material	SILICON
Packaging	Tube
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Max Power Dissipation	250W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	12A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Continuous Drain Current (ID)	10A
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	1000V
RoHS Status	RoHS Compliant
Lead Free	Lead Free