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IRF5806TRPBF

IRF5806TRPBF

IRF5806TRPBF

Infineon Technologies

IRF5806TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF5806TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 86MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time6.2 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 86m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 4.5V
Rise Time27ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±20V
Fall Time (Typ) 126 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) -4A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -1.2 V
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2078 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.123226$0.123226
10$0.116252$1.16252
100$0.109671$10.9671
500$0.103463$51.7315
1000$0.097607$97.607

IRF5806TRPBF Product Details

IRF5806TRPBF Description


IRF5806TRPBF is a kind of P-channel HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide extremely low on-resistance per silicon area based on advanced processing techniques. As a result, it is reliable and efficient for electronic engineers to use in battery and load management applications. Power MOSFET IRF5806TRPBF is available in the TSOP-6 package, making it ideally suited for applications where printed circuit board space is at a premium.



IRF5806TRPBF Features


  • Low gate charge

  • Extremely low on-resistance per silicon area

  • Advanced processing techniques

  • Available in the TSOP-6 package

  • Unique thermal design and RDS(on) reduction



IRF5806TRPBF Applications


  • Battery and load management


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