IXFT13N80Q

new-10%

Manufacturer part number:IXFT13N80Q

Manufacturer:IXYS

Description:Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXFT13N80Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	52A
Avalanche Energy Rating (Eas)	750 mJ
RoHS Status	ROHS3 Compliant