IXFT150N20T

new-10%

Manufacturer part number:IXFT150N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 150A TO-268

Case Package:SOT-23

Datasheet:IXFT150N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, TrenchT2™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	11700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	150A Tc
Gate Charge (Qg) (Max) @ Vgs	177nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	150A
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	375A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free