FCD260N65S3 Description
FCD260N65S3 is a 650v SUPERFET? III N-Channel Power MOSFET. SUPERFIT III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Consequently, the SUPERFIT III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
FCD260N65S3 Features
[email protected] Tj= 150 °C
Low Effective Output Capacitance (Typ. Cossleff.)= 248 pF)
Ultra-Low Gate Charge (Typ. Qg= 24 nC)
Optimized Capacitance
Internal Gate resistance: 8.7ohm
Typ. RDS(on) = 222 mQ
100% Avalanche Tested
RoHS Compliant RoHS Compliant
Wave soldering guarantee
FCD260N65S3 Applications
