IXFT30N50

new-10%

Manufacturer part number:IXFT30N50

Manufacturer:IXYS

Description:Trans MOSFET N-CH 500V 30A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXFT30N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant