IXFX210N17T

new-10%

Manufacturer part number:IXFX210N17T

Manufacturer:IXYS

Description:MOSFET N-CH 170V 210A PLUS247

Case Package:SOT-23

Datasheet:IXFX210N17T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	GigaMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	18800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	210A Tc
Gate Charge (Qg) (Max) @ Vgs	285nC @ 10V
Drain to Source Voltage (Vdss)	170V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	210A
Drain-source On Resistance-Max	0.0075Ohm
Pulsed Drain Current-Max (IDM)	580A
DS Breakdown Voltage-Min	170V
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	RoHS Compliant