IXFT50N60P3

new-10%

Manufacturer part number:IXFT50N60P3

Manufacturer:IXYS

Description:MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET

Case Package:SOT-23

Datasheet:IXFT50N60P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1040W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.04kW
Case Connection	DRAIN
Turn On Delay Time	31 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	145m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.145Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	125A
Avalanche Energy Rating (Eas)	1000 mJ
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant