IXFT70N20Q3

new-10%

Manufacturer part number:IXFT70N20Q3

Manufacturer:IXYS

Description:MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A

Case Package:SOT-23

Datasheet:IXFT70N20Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	690W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	690W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	210A
Avalanche Energy Rating (Eas)	1500 mJ
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant