FQP4N50

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Manufacturer part number:FQP4N50

Manufacturer:ON Semiconductor

Description:FQP4N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP4N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	3.4A
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Power Dissipation	70W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	3.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	460pF
Drain to Source Resistance	2.7Ohm
Rds On Max	2.7 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free