IXFT88N30P

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IXFT88N30P

Manufacturer part number:IXFT88N30P

Manufacturer:IXYS

Description:MOSFET N-CH 300V 88A TO268

Case Package:SOT-23

Datasheet:IXFT88N30P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™, PolarP2™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	88A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	220A
DS Breakdown Voltage-Min	300V
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free