IRFP250MPBF

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IRFP250MPBF

Manufacturer part number:IRFP250MPBF

Manufacturer:Infineon Technologies

Description:IRFP250MPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP250MPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	75MOhm
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2159pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	123nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Height	21.1mm
Length	16.129mm
Width	5.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free