IXFV12N80PS

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IXFV12N80PS

Manufacturer part number:IXFV12N80PS

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXFV12N80PSPower MOSFET, N Channel, 12 A, 800 V, 850 mohm, 10 V, 5 V

Case Package:SOT-23

Datasheet:IXFV12N80PS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PLUS-220SMD
Number of Pins	220
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	70 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.85Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	36A
Dual Supply Voltage	800V
Avalanche Energy Rating (Eas)	800 mJ
Nominal Vgs	5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant