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IXFX320N17T2

IXFX320N17T2

IXFX320N17T2

IXYS

MOSFET (Metal Oxide) N-Channel Tube 5.2m Ω @ 60A, 10V ±20V 45000pF @ 25V 640nC @ 10V TO-247-3

SOT-23

IXFX320N17T2 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series GigaMOS™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Output Voltage 170V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Nominal Supply Current 100A
Operating Mode ENHANCEMENT MODE
Output Current 320A
Case Connection DRAIN
Turn On Delay Time 46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 45000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 320A Tc
Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 230 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 320A
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 800A
Avalanche Energy Rating (Eas) 5000 mJ
Number of Drivers 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $25.768745 $25.768745
10 $24.310137 $243.10137
100 $22.934091 $2293.4091
500 $21.635935 $10817.9675
1000 $20.411260 $20411.26
IXFX320N17T2 Product Details

IXFX320N17T2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The maximum input capacitance of this device is 45000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 320A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 115 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 800A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Using drive voltage (10V), this device helps reduce its power consumption.

IXFX320N17T2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 320A
the turn-off delay time is 115 ns
based on its rated peak drain current 800A.


IXFX320N17T2 Applications


There are a lot of IXYS
IXFX320N17T2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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