IXFX32N50

new-10%

Manufacturer part number:IXFX32N50

Manufacturer:IXYS

Description:MOSFET N-CH 500V 32A PLUS247

Case Package:SOT-23

Datasheet:IXFX32N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	360W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	32A
Drain-source On Resistance-Max	0.15Ohm
Pulsed Drain Current-Max (IDM)	120A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free