IXFX80N60P3

new-10%

Manufacturer part number:IXFX80N60P3

Manufacturer:IXYS

Description:MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET

Case Package:SOT-23

Datasheet:IXFX80N60P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3kW
Case Connection	DRAIN
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	2000 mJ
Height	21.34mm
Length	16.13mm
Width	5.21mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free