IRF135S203 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF135S203 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Series
HEXFET®, StrongIRFET™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
441W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8.4m Ω @ 77A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9700pF @ 50V
Current - Continuous Drain (Id) @ 25°C
129A Tc
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Drain to Source Voltage (Vdss)
135V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
129A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$2.38228
$1905.824
IRF135S203 Product Details
IRF135S203 Description
IRF135S203 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 135V. The operating temperature of the IRF135S203 is -55°C~175°C TJ and its maximum power dissipation is 441W Tc. IRF135S203 has 3 pins and it is available in Tape & Reel (TR) packaging way.
IRF135S203 Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness