IXGA20N120

new-10%

Manufacturer part number:IXGA20N120

Manufacturer:IXYS

Description:IGBT 1200V 40A 150W TO263

Case Package:SOT-23

Datasheet:IXGA20N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N120
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	40A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3V
Turn On Time	57 ns
Test Condition	800V, 20A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	1250 ns
IGBT Type	PT
Gate Charge	63nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	28ns/400ns
Switching Energy	6.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	700ns
RoHS Status	ROHS3 Compliant