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IRGP4063DPBF

IRGP4063DPBF

IRGP4063DPBF

Infineon Technologies

IRGP4063DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4063DPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 300V
Max Power Dissipation 330W
Current Rating 96A
Base Part Number IRGP4063D
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application POWER CONTROL
Rise Time 56ns
Drain to Source Voltage (Vdss) 300V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
Reverse Recovery Time 115 ns
Continuous Drain Current (ID) 96A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.14V
Turn On Time 100 ns
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Turn Off Time-Nom (toff) 210 ns
IGBT Type Trench
Gate Charge 95nC
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 46ns
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.85000 $8.85
25 $7.62640 $190.66
100 $6.62190 $662.19
500 $5.76624 $2883.12
1,000 $5.02220 $5.0222
IRGP4063DPBF Product Details

IRGP4063DPBF Description


IRGP4063DPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode, manufactured by Infineon Technologies.



IRGP4063DPBF Features


  • Square RBSOA

  • Lead-Free Package

  • Low switching losses

  • 5 μS short circuit SOA

  • Tight parameter distribution

  • Ultra-fast soft Recovery Co-Pak Diode

  • Low VCE (ON) Trench IGBT Technology

  • Maximum Junction temperature 175 °C

  • Positive VCE (ON) Temperature co-efficient

  • 100% of the parts tested for 4X rated current (ILM)



IRGP4063DPBF Application


  • Power control


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