IRGP4063DPBF

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Manufacturer part number:IRGP4063DPBF

Manufacturer:Infineon Technologies

Description:IRGP4063DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4063DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	300V
Max Power Dissipation	330W
Current Rating	96A
Base Part Number	IRGP4063D
Number of Elements	1
Element Configuration	Single
Power Dissipation	330W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	POWER CONTROL
Rise Time	56ns
Drain to Source Voltage (Vdss)	300V
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	145 ns
Collector Emitter Voltage (VCEO)	2.14V
Max Collector Current	96A
Reverse Recovery Time	115 ns
Continuous Drain Current (ID)	96A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.14V
Turn On Time	100 ns
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	Trench
Gate Charge	95nC
Current - Collector Pulsed (Icm)	144A
Td (on/off) @ 25°C	60ns/145ns
Switching Energy	625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	46ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free