IXGH10N100U1

new-10%

Manufacturer part number:IXGH10N100U1

Manufacturer:IXYS

Description:IGBT 1000V 20A 100W TO247AD

Case Package:SOT-23

Datasheet:IXGH10N100U1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1kV
Max Power Dissipation	100W
Terminal Position	SINGLE
Current Rating	20A
Base Part Number	IXG*10N100
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.5V
Max Collector Current	20A
Reverse Recovery Time	60ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	300 ns
Test Condition	800V, 10A, 150 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 10A
Turn Off Time-Nom (toff)	1850 ns
Gate Charge	52nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	100ns/550ns
Switching Energy	2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant