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FF450R33T3E3BPSA1

FF450R33T3E3BPSA1

FF450R33T3E3BPSA1

Infineon Technologies

FF450R33T3E3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF450R33T3E3BPSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Series XHP™3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 1000000W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 450A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 450A
IGBT Type Trench Field Stop
NTC Thermistor No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1,923.286500 $1
10 $1,860.044971 $10
25 $1,847.115165 $25
50 $1,834.275238 $50
100 $1,796.547736 $100
500 $1,668.103747 $500
FF450R33T3E3BPSA1 Product Details

FF450R33T3E3BPSA1 Description

 

FF450R33T3E3BPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF450R33T3E3BPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FF450R33T3E3BPSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FF450R33T3E3BPSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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