FF450R33T3E3BPSA1

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Manufacturer part number:FF450R33T3E3BPSA1

Manufacturer:Infineon Technologies

Description:FF450R33T3E3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FF450R33T3E3BPSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~150°C
Series	XHP™3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Configuration	Half Bridge
Power - Max	1000000W
Input	Standard
Current - Collector Cutoff (Max)	5mA
Voltage - Collector Emitter Breakdown (Max)	3300V
Current - Collector (Ic) (Max)	450A
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 450A
IGBT Type	Trench Field Stop
NTC Thermistor	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

FF450R33T3E3BPSA1 Description

FF450R33T3E3BPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF450R33T3E3BPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FF450R33T3E3BPSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FF450R33T3E3BPSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Infineon Technologies

FP50R12KS4CBOSA1

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