FF450R33T3E3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF450R33T3E3BPSA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Series
XHP™3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
1000000W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
450A
Vce(on) (Max) @ Vge, Ic
2.75V @ 15V, 450A
IGBT Type
Trench Field Stop
NTC Thermistor
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1,923.286500
$1
10
$1,860.044971
$10
25
$1,847.115165
$25
50
$1,834.275238
$50
100
$1,796.547736
$100
500
$1,668.103747
$500
FF450R33T3E3BPSA1 Product Details
FF450R33T3E3BPSA1 Description
FF450R33T3E3BPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF450R33T3E3BPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.