IXGQ50N60C4D1

new-10%

Manufacturer part number:IXGQ50N60C4D1

Manufacturer:IXYS

Description:IGBT 600V 90A 300W TO3P

Case Package:SOT-23

Datasheet:IXGQ50N60C4D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Position	SINGLE
Reach Compliance Code	unknown
Pin Count	2
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	90A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	75 ns
Test Condition	400V, 36A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 36A
Turn Off Time-Nom (toff)	306 ns
IGBT Type	PT
Gate Charge	113nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	40ns/270ns
Switching Energy	950μJ (on), 840μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant