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IRG4BC20FD-S

IRG4BC20FD-S

IRG4BC20FD-S

Infineon Technologies

IRG4BC20FD-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20FD-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Turn On Time 63 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 610 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
150 $4.03153 $604.7295
IRG4BC20FD-S Product Details

IRG4BC20FD-S                 Description


IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.


IRG4BC20FD-S                 Features


·Fast: Optimized for medium operating

frequencies( 1-5 kHz in hard switching.>20 kHz in resonant mode).

·Generation 4 1GBT design provides tighter

parameter distribution and higher efficiency than Generation 3

·IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diodes for use in bridge configurations

·Industry standard D2Pak package

 

IRG4BC20FD-S                Applications

Memory Termination Requlator for DDRDDR2

DDR3.DDR3Land DDR4 VTT Termination

Low-Voltage Applications for 1-V to 6-VInput Rails 


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