Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Base Part Number	IXG*32N170
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Rise Time	250ns
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	38A
Reverse Recovery Time	230 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	3.5V
Turn On Time	90 ns
Test Condition	1360V, 21A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 21A
Turn Off Time-Nom (toff)	920 ns
IGBT Type	NPT
Gate Charge	155nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	45ns/270ns
Switching Energy	10.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	500ns
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IXGR32N170H1

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