STGP7H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP7H60DF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
88W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP7
Input Type
Standard
Power - Max
88W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
14A
Reverse Recovery Time
136 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 7A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 7A
IGBT Type
Trench Field Stop
Gate Charge
46nC
Current - Collector Pulsed (Icm)
28A
Td (on/off) @ 25°C
30ns/160ns
Switching Energy
99μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.011226
$5.011226
10
$4.727572
$47.27572
100
$4.459974
$445.9974
500
$4.207522
$2103.761
1000
$3.969360
$3969.36
STGP7H60DF Product Details
STGP7H60DF Description
STGP7H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the the efficiency of very high frequency converters. Easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGP7H60DF Features
Advanced proprietary trench gate and field stop structure