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STGP7H60DF

STGP7H60DF

STGP7H60DF

STMicroelectronics

STGP7H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP7H60DF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 88W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP7
Input Type Standard
Power - Max 88W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 14A
Reverse Recovery Time 136 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 7A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 7A
IGBT Type Trench Field Stop
Gate Charge 46nC
Current - Collector Pulsed (Icm) 28A
Td (on/off) @ 25°C 30ns/160ns
Switching Energy 99μJ (on), 100μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.011226 $5.011226
10 $4.727572 $47.27572
100 $4.459974 $445.9974
500 $4.207522 $2103.761
1000 $3.969360 $3969.36
STGP7H60DF Product Details

STGP7H60DF Description


STGP7H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the the efficiency of very high frequency converters. Easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.



STGP7H60DF Features


Advanced proprietary trench gate and field stop structure

Low conduction and switching losses

Positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Package: TO-220



STGP7H60DF Applications


Motor control

UPS, PFC


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