IXGT31N60D1

new-10%

Manufacturer part number:IXGT31N60D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-268AA

Case Package:SOT-23

Datasheet:IXGT31N60D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	15 ns
Test Condition	480V, 31A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 31A
Turn Off Time-Nom (toff)	800 ns
Gate Charge	80nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	15ns/400ns
Switching Energy	6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant