IRG7PH28UD1MPBF

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Manufacturer part number:IRG7PH28UD1MPBF

Manufacturer:Infineon Technologies

Description:IRG7PH28UD1MPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH28UD1MPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	115W
Element Configuration	Single
Input Type	Standard
Power - Max	115W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	30A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 15A
IGBT Type	Trench
Gate Charge	90nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	-/229ns
Switching Energy	543μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant