Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	780W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	780W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	280A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	123 ns
Test Condition	480V, 100A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 100A
Turn Off Time-Nom (toff)	520 ns
IGBT Type	PT
Gate Charge	465nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	40ns/227ns
Switching Energy	2.9mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IXGX120N60B3

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