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IXST30N60B2D1

IXST30N60B2D1

IXST30N60B2D1

IXYS

Trans IGBT Chip N-CH 600V 48A 3-Pin(2+Tab) TO-268

SOT-23

IXST30N60B2D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 600V
Max Power Dissipation 250W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 48A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*30N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 30 ns
Transistor Application POWER CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 130 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 48A
Reverse Recovery Time 30 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 80 ns
Test Condition 400V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A
Turn Off Time-Nom (toff) 436 ns
IGBT Type PT
Gate Charge 50nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/130ns
Switching Energy 550μJ (off)
Height 5.1mm
Length 16.05mm
Width 14mm
RoHS Status RoHS Compliant
Lead Free Lead Free

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